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• (author = "Yang, H" AND subject = "Gan epilayers")
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author = "Yang, H" > : "Gan epilayers" (x)
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Found 3 documents, displaying page 1 of 1

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

Author(s) : Wang, RX , Xu, SJ , Shi, SL , Beling, CD , Fung, S , Zhao, DG , Yang, H , Tao, XM
Description : Under identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) char...
Repository : The HKU Scholars Hub
Language(s) : English

Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?

Author(s) : Zheng, CC , Xu, S , Zhang, F , Ning, J , Zhao, DG , Yang, H , Che, CM
Description : Low-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns ...
Repository : The HKU Scholars Hub
Language(s) : English

Optical properties of light-hole excitons in GaN epilayers

Author(s) : Zhang, F , Xu, SJ , Ning, JQ , Zheng, CC , Zhao, DG , Yang, H , Che, CM
Description : Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well r...
Repository : The HKU Scholars Hub
Language(s) : English
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Found 3 documents, displaying page 1 of 1