Results
author = "RATTI, LODOVICO"
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics
Author(s) :
MANGHISONI, MASSIMO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
,
GAIONI, LUIGI
,
SPEZIALI, VALERIA
,
RATTI, LODOVICO
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
MAPS in 130 nm triple well CMOS technology for HEP applications
Author(s) :
MANGHISONI, MASSIMO
,
RE, VALERIO
,
RATTI, LODOVICO
,
POZZATI, ENRICO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
bibliographic data only - solo scheda bibliografica
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments
Author(s) :
RE, VALERIO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circuits for the readout of detectors in the future generation of HEP experiments. In applications such as inner SLHC detectors, these ultra-deep submicron systems will have to stand total doses of ionizing...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors
Author(s) :
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Review of radiation effects leading to noise performance degradation in 100-nm scale microelectronic technologies
Author(s) :
RE, VALERIO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
Advanced CMOS technologies promise to meet the demanding requirements of mixed-signal integrated circuits for detector readout in future experiments at SLHC, ILC and Super B Factory. In the particle physics community, microelectronics designers are presently evaluating CMOS processes with a minimum ...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration
Author(s) :
GAIONI, LUIGI
,
MANAZZA, ALESSIA
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0
Author(s) :
MANAZZA, ALESSIA
,
GAIONI, LUIGI
,
RATTI, LODOVICO
,
TRAVERSI, GIANLUCA
,
ZUCCA, STEFANO
,
RE, VALERIO
Description :
This work is concerned with the design of two different analog channels for hybrid and monolithic pixels readout in view of applications to the SVT at the SuperB Factory. The circuits have been designed in a 130 nm CMOS, vertically integrated technology, which, among others, may provide some advantag...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions
Author(s) :
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
OBERTI, ENRICO
,
RE, VALERIO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
,
FALLICA, GIORGIO
Description :
This work is devoted to the analysis of g-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the design of...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Fermilab silicon strip readout chip for BTeV
Author(s) :
YAREMA, RAY
,
HOFF, JIM
,
MEKKAOUI, ABDERREZAK
,
MANGHISONI, MASSIMO
,
RE, VALERIO
,
MANFREDI, PIER FRANCESCO
,
RATTI, LODOVICO
Description :
A chip has been developed for reading out the silicon strip detectors in the new BTeV colliding beam experiment at Fermilab. The chip has been designed in a 0.25 µm CMOS technology for high radiation tolerance. Numerous programmable features have been added to the chip, such as setup for operation a...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology
Author(s) :
RE, VALERIO
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
GAIONI, LUIGI
,
TRAVERSI, GIANLUCA
,
SPEZIALI, VALERIA
,
YAREMA, RAY
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English