Results
author = "Nguyen, Ngoc Duy"
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Author(s) :
Reiche, M.
,
Moutanabbir, O.
,
Himcinschi, C.
,
Christiansen, S.
,
Erfurth, E.
,
Gösele, U.
,
Mantl, S.
,
Buca, D.
,
Zhao, Q.
Description :
Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain is introduced in CMOS devices by process-induced stressors allowing the local generation of tensile or compressive strain in the channel region of MOSFETs. Biaxial strain is introduced by growing thin ...
Repository :
ORBi (University of Liège)
Language(s) :
English
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Author(s) :
Nguyen, Ngoc Duy
,
Rosseel, Erik
,
Takeuchi, Shotaro
,
Everaert, Jean-Luc
,
Yang, Lijun
,
Goossens, Jozefien
,
Moussa, Alain
Description :
We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt...
Repository :
ORBi (University of Liège)
Language(s) :
English
A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture
Author(s) :
Van Huylenbroeck, Stefaan
,
Sibaja-Hernandez, Arturo
,
Venegas, Rafael
,
You, Suzhen
,
Winderickx, Gillis
,
Radisic, Dunja
Description :
An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
Repository :
ORBi (University of Liège)
Language(s) :
English
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
Author(s) :
Nguyen, Ngoc Duy
,
Wang, Gang
,
Brammertz, Guy
,
Leys, Maarten
,
Waldron, Niamh
,
Winderickx, Gillis
,
Lismont, Kevin
,
Dekoster, Johan
Description :
We have deposited III-V alloys on 200 mm Si miscut wafers with an oxide pattern. The selective epitaxial growth (SEG) of GaAs in large windows defined by SiO2 lines on a thick strained-relaxed Ge buffer layer served as a test vehicle which allowed us to demonstrate the integration of a III-V materia...
Repository :
ORBi (University of Liège)
Language(s) :
English
Strained silicon-on-insulator - Fabrication and characterization
Author(s) :
Reiche, M.
,
Himcinschi, C.
,
Gösele, U.
,
Christiansen, S.
,
Mantl, S.
,
Buca, D.
,
Zhao, Q. T.
,
Feste, S.
,
Loo, R.
,
Nguyen, Ngoc Duy
Description :
Repository :
ORBi (University of Liège)
Language(s) :
English
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
Author(s) :
Nguyen, Ngoc Duy
,
Wang, Gang
,
Waldron, Niamh
,
Winderickx, Gillis
,
Brammertz, Guy
,
Leys, Maarten
,
Lismont, Kevin
,
Dekoster, Johan
Description :
Repository :
ORBi (University of Liège)
Language(s) :
English
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Author(s) :
Waldron, Niamh
,
Nguyen, Ngoc Duy
,
Lin, Dennis
,
Brammertz, Guy
,
Vincent, Benjamin
,
Firrincieli, Andrea
,
Winderickx, Gillis
Description :
As CMOS continues to scales to more advanced nodes, new higher mobility channel materials will have to be introduced as an alternative to Si in order to meet power and performance requirements [1]. III-V and Ge materials have emerged as an attractive option for nMOS and pMOS respectively. However, f...
Repository :
ORBi (University of Liège)
Language(s) :
English
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Author(s) :
Waldron, Niamh
,
Nguyen, Ngoc Duy
,
Lin, Dennis
,
Brammertz, Guy
,
Vincent, Benjamin
,
Firrincieli, Andrea
,
Windericks, Gillis
Description :
We report on the fabrication of MOS capacitors on 200 mm virtual GaAs substrates using a Si CMOS processing environment. The fabricated capacitors were comparable to those processed on bulk GaAs material. Topside contact was made to the GaAs using a novel CMOS compatible self-aligned NiGe contact sc...
Repository :
ORBi (University of Liège)
Language(s) :
English