Results
author = "Nguyen, Ngoc Duy"
Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition
Author(s) :
Park, Si-Young
,
Anisha, Ramesh
,
Berger, Paul
,
Loo, Roger
,
Nguyen, Ngoc Duy
,
Takeuchi, Shotaro
,
Caymax, Matty
Description :
This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells created by sharp delta-doping planes which provide for a resonant tunneling condition through the...
Repository :
ORBi (University of Liège)
Language(s) :
English
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Author(s) :
Wang, Gang
,
Leys, Maarten
,
Nguyen, Ngoc Duy
,
Loo, Roger
,
Richard, Olivier
,
Bender, Hugo
,
Heyns, Marc
,
Caymax, Matty
Description :
In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 6° miscut toward (1 1 1) using a thin Ge buffer layer. We studied the impact of growth rates and steric hindrance effects on the nano-twin formation a...
Repository :
ORBi (University of Liège)
Language(s) :
English
Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves
Author(s) :
Bogdanowicz, Janusz
,
Dortu, Fabian
,
Clarysse, Trudo
,
Vandervorst, Wilfried
,
Rosseel, Erik
,
Nguyen, Ngoc Duy
,
Shaughnessy, Derrick
Description :
The ITRS Roadmap highlights the electrical characterization of the source and drain extension regions as a key challenge for future complimentary-metal-oxide-semiconductor technology. Presently, an accurate determination of the depth of ultrashallow junctions can routinely only be performed by time-...
Repository :
ORBi (University of Liège)
Language(s) :
English
Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates
Author(s) :
Wang, Gang
,
Nguyen, Ngoc Duy
,
Leys, Maarten
,
Loo, Roger
,
Richard, Olivier
,
Brammertz, Guy
,
Meuris, Marc
,
Heyns, Marc
Description :
We report high quality InP layers selectively grown in shallow trench isolation structures on 6 degree offcut Si (001) substrates capped with a thin Ge buffer layer. The Ge layer was used to reduce the thermal budget for surface clean and double step formation. The atomic steps on the Ge surface wer...
Repository :
ORBi (University of Liège)
Language(s) :
English
In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
Author(s) :
Nguyen, Ngoc Duy
,
Loo, R.
,
Hikavyy, A.
,
Van Daele, B.
,
Ryan, P.
,
Wormington, M.
,
Hopkins, J.
Description :
The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We showed that despite of polycrystalline Si on the mask material of patterned wafers, HRXRD ...
Repository :
ORBi (University of Liège)
Language(s) :
English
Conformal doping of FINFET's : a fabrication and metrology challenge
Author(s) :
Vandervorst, Wilfried
,
Eyben, Pierre
,
Mody, Jay
,
Jurczak, Malgorzata
,
Nguyen, Ngoc Duy
,
Takeuchi, Shotaro
,
Leys, Frederik
Description :
Repository :
ORBi (University of Liège)
Language(s) :
English
Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates
Author(s) :
Buca, D.
,
Minamisawa, R. A.
,
Trinkaus, H.
,
Holländer, B.
,
Nguyen, Ngoc Duy
,
Loo, R.
,
Mantl, S.
Description :
In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a -impurity layer grown in the Si substrate below the SiGe layer results in planar localization and homogenization of dislocati...
Repository :
ORBi (University of Liège)
Language(s) :
English
Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs
Author(s) :
You, Suzhen
,
Van Huylenbroeck, Stefaan
,
Nguyen, Ngoc Duy
,
Sibaja-Hernandez, Arturo
,
Venegas, Rafael
,
Van Wichelen, Koen
Description :
This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external base poly, and using an optimized non-selective epi...
Repository :
ORBi (University of Liège)
Language(s) :
English
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Author(s) :
Waldron, Niamh
,
Wang, Gang
,
Nguyen, Ngoc Duy
,
Orzali, Tommaso
,
Merckling, Clément
,
Brammertz, Guy
,
Ong, Patrick
,
Winderickx, Gillis
Description :
We report on the fabrication on InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices on 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of the aspect-ratio-trapping technique. Post CMP these substrate resulted in a planar substrate...
Repository :
ORBi (University of Liège)
Language(s) :
English
Strained silicon-on-insulator - Fabrication and characterization
Author(s) :
Reiche, M.
,
Himcinschi, C.
,
Gösele, U.
,
Christiansen, S.
,
Mantl, S.
,
Buca, D.
,
Zhao, Q. T.
,
Feste, S.
,
Loo, R.
,
Nguyen, Ngoc Duy
Description :
SSOI substrates were successfully fabricated using He+ ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide layers. The reduced thickness of the SiGe buffer possess numerous advantages such as reduced...
Repository :
ORBi (University of Liège)
Language(s) :
English