Results
author = "Heremans, P."
ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE
Description :
Hot carrier degradation induced during AC-stressing of NMOS transistors is evaluated using the charge pumping technique and the results are compared with those from DC-stress. Besides a degradation component that is only dependent on stress time, an additional component is observed that is proportio...
Repository :
HAL - Hyper Article on Line
Language(s) :
English
Nucleation of organic semiconductors on inert substrates
Description :
We have adapted the microscopic theory of nucleation for the epitaxial growth of inorganic materials to the nucleation of organic small molecules on an inert substrate like the gate dielectric of an organic thin-film transistor. The parameters required to explore the model were calculated with the s...
Repository :
Document Server@UHasselt
Language(s) :
English
High mobility electron-conducting thin-film transistors by organic vapor phase deposition
Author(s) :
Rolin, Cédric
,
Vasseur, K.
,
Schols, Sarah
,
Jouk, M.
,
Duhoux, G.
,
Mueller, R.
,
Genoe, J.
,
Heremans, P.
Description :
In this letter, we report on the growth of thin films of N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 +/- 4% and deposition rates up to 15 angstrom/s. Top-co...
Repository :
DIAL - Dépôt Institutionnel de l'Académie Louvain
Language(s) :
English
Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel
Author(s) :
De Vusser, S.
,
Schols, S.
,
Steudel, S.
,
VERLAAK, Stijn
,
Genoe, J.
,
OOSTERBAAN, Wibren
,
LUTSEN, Laurence
,
VANDERZANDE, Dirk
Description :
The authors have realized a light-emitting organic field-effect transistor. Excitons are generated at the interface between a n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithog...
Repository :
Document Server@UHasselt
Language(s) :
English
Polythiophene based bulk heterojunction solar cells: morphology and its implications
Author(s) :
VANLAEKE, Peter
,
VANHOYLAND, Geert
,
Aernauts, T.
,
Cheyns, D.
,
Deibel, C.
,
MANCA, Jean
,
Heremans, P.
,
Poortmans, J.
Description :
The performance of bulk heterojunction organic solar cells based on Poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) processed from chlorobenzene solution can be enhanced by a thermal treatment of the device. The morphology of films made from 1 / 2 wt. ratio bl...
Repository :
Document Server@UHasselt
Language(s) :
English
P3HT/PCBM bulk heterojunction solar cells: Relation between morphology and electro-optical characteristics
Author(s) :
VANLAEKE, Peter
,
SWINNEN, Ann
,
HAELDERMANS, Ilse
,
VANHOYLAND, Geert
,
Aernouts, T.
,
Cheyns, D.
,
Deibel, C.
,
D'HAEN, Jan
Description :
The performance of organic solar cells based on the blend of regioregular poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thermal annealing conditions. X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) dif...
Repository :
Document Server@UHasselt
Language(s) :
English
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
Author(s) :
Dobbelaere, W.
,
DE BOECK, Joan
,
Heremans, P.
,
Mertens, R.
,
Borghs, G.
,
Luyten, W.
,
van Landuyt, J.
Description :
We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-...
Repository :
Document Server@UHasselt
Language(s) :
English
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
Author(s) :
DE BOECK, Joan
,
Dobbelaere, W.
,
Heremans, P.
,
Mertens, R.
,
Borghs, G.
,
Luyten, W.
,
van Landuyt, J.
Description :
InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diod...
Repository :
Document Server@UHasselt
Language(s) :
English
Teaching nanoscience across scientific and geographical borders – A European Master programme in nanoscience and nanotechnology
Author(s) :
Chesneau, A.
,
Groeseneken, G.
,
Heremans, P.
,
Rep, D.
,
Rudquist, P.
,
Schwille, P.
,
Sluijter, B.
,
Wendin, G.
Description :
Repository :
TU Delft Repository
Language(s) :
English
Teaching nanoscience across scientific and geographical borders ¿ A European Master programme in nanoscience and nanotechnology
Author(s) :
Chesneau, A.
,
Groeseneken, G.
,
Heremans, P.
,
Rep, D.
,
Rudquist, P.
,
Schwille, P.
,
Sluijter, B.
,
Wendin, G.
Description :
Repository :
TU Delft Repository
Language(s) :
English