Results
author = "GAIONI, Luigi"
> : "Ingegneria industriale e dell'informazione"
(x)
Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology
Author(s) :
RE, VALERIO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
TRAVERSI, GIANLUCA
Description :
Irradiation tests on 90 nm CMOS devices at different total ionizing doses lead to new insights into degradation mechanisms in gate oxides and lateral isolation structures and into their impact on gate and drain current noise sources. The action of lateral parasitic transistors and their physical par...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
3D DNW MAPS for High Resolution, Highly Efficient, Sparse Readout CMOS Detectors
Author(s) :
RATTI, LODOVICO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Charge Signal Processors in Sparse Readout CMOS MAPS and Hybrid Pixel Sensors for the SuperB Layer0
Author(s) :
TRAVERSI, GIANLUCA
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions
Author(s) :
TRAVERSI, GIANLUCA
,
RATTI, LODOVICO
,
MANGHISONI, MASSIMO
,
GAIONI, LUIGI
,
PANTANO, DEVIS
Description :
The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm and 90 nm commercial CMOS technologies exposed to high doses of ionizing radiation. The investigation has been mainly focused on their noise properties in view of applications to the design of low-noise...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
A 3D deep n-well CMOS MAPS for the ILC vertex detector
Author(s) :
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
Description :
This work presents the features of a new kind of deep n-well monolithic active pixel sensor
(DNW-MAPS), called SDR1 (Sparsified Data Readout), which exploits the capabilities of vertical integration (3D) processing in view of the design of a high granularity detector for vertexing
applications at th...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation
Author(s) :
RE, VALERIO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
TRAVERSI, GIANLUCA
Description :
Experimental data provide insight into the mechanisms governing the impact of gate and lateral isolation dielectrics and of scaling-related technological advances on noise and its sensitivity to total ionizing dose effects in Low Power 65 nm CMOS devices. The behavior of the 1/f noise term is correl...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics
Author(s) :
MANGHISONI, MASSIMO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
,
GAIONI, LUIGI
,
SPEZIALI, VALERIA
,
RATTI, LODOVICO
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments
Author(s) :
RE, VALERIO
,
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circuits for the readout of detectors in the future generation of HEP experiments. In applications such as inner SLHC detectors, these ultra-deep submicron systems will have to stand total doses of ionizing...
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors
Author(s) :
GAIONI, LUIGI
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
,
SPEZIALI, VALERIA
,
TRAVERSI, GIANLUCA
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English
MAPS with pixel level sparsified readout: from standard CMOS to vertical integration
Author(s) :
GAIONI, LUIGI
,
MANAZZA, ALESSIA
,
MANGHISONI, MASSIMO
,
RATTI, LODOVICO
,
RE, VALERIO
,
TRAVERSI, GIANLUCA
Description :
Repository :
Aisberg - Archivio Istituzionale Università di Bergamo
Language(s) :
English