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• (author = "Barker, J" AND publisher = "Institute of Electrical and Electronics Engineers")
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author = "Barker, J" > : "Institute of Electrical and Electronics Engineers" (x)
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Found 13 documents, displaying page 1 of 2

Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices

Author(s) : Watling, J.R. , Barker, J.R. , Asenov, A.
Description : The atomistic modelling of silicon MOSFET devices becomes essential at deep sub-micron scales when it is no longer possible to represent the charged impurities by a continuous charge distribution with a determined doping density. Instead the spatial distribution and the actual number of dopants must...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

Author(s) : Watling, J.R. , Asenov, A. , Barker, J.R.
Description : An analytical geometric model for the valence band in strained and relaxed Si1-xGex is presented, which shows good agreement with a 6-band k·p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has appl...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Author(s) : Roy, S. , Kaya, S. , Asenov, A. , Barker, J.R.
Description : A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device ge...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Complete Monte Carlo RF analysis of 'real' short-channel compound FET's

Author(s) : Babiker, S. , Asenov, A. , Cameron, N. , Beaumont, S. P. , Barker, J. R.
Description : A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation of compound FET's with realistic device geometry is presented. Y-parameters are obtained through Fourier transformation of the EMC transients in response to small changes in the terminal voltages. The terminal curre...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks

Author(s) : Yang, L. , Watling, J. R. , Adam-Lema, F. , Asenov, A. , Barker, J. R.
Description : Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths down to 25nm have been investigated.
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs

Author(s) : Watling, J.R. , Zhao, Y.P. , Asenov, A. , Barker, J.R.
Description : Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Monte Carlo investigation of optimal device architectures for SiGe FETs

Author(s) : Roy, S. , Kaya, S. , Babiker, S. , Asenov, A. , Barker, J.R.
Description : Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care. 0.1-0.12 μm gate length designs are investigated using Monte Carlo techniq...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study

Author(s) : Babiker, S. , Asenov, A. , Roy, S. , Barker, J.R. , Beaumont, S.P.
Description : The impact of InxAl1-xAs strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively s...
Repository : Glasgow ePrints Service
Language(s) : Undetermined

RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study

Author(s) : Roy, S. , Asenov, A. , Babiker, S. , Barker, J.R. , Beaumont, S.P.
Description : No abstract avaliable.
Repository : Glasgow ePrints Service
Language(s) : Undetermined

Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Author(s) : Yang, L. , Asenov, A. , Borici, M. , Watling, J. R. , Barker, J. R. , Roy, S. , Elgaid, K. , Thayne, I. , Hackbarth, T.
Description : Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping strategies on device performance and linearity. The de...
Repository : Glasgow ePrints Service
Language(s) : Undetermined
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Found 13 documents, displaying page 1 of 2