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Gamma radiation nose system based on In2O3/SiO thick film PN-junctions

Author(s) : Arshak, Khalil , Korostynska, Olga , Szumilas, L. , Harris, John A. , Clifford, S.A.
Description : peer-reviewed , In2O3 and SiO mixtures into thick film pn-junctions form were investigated for γ-radiation dosimetry purposes. Results show that the current is increased with the increase in radiation dose to a certain level, exceeding this level resulted in device damage. The performance parameters of...
Repository : ULIR , View repository documents
Language(s) : English
Subject(s) : electronic-nose system , γ-radiation , metal oxides , thick films
Publisher(s) : IEEE Computer Society
Contributor(s) :
Source(s) :
Publication Date(s) : 2011-07-01