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Total ionizing dose effects on the noise performances of a 0.13 'micron'm CMOS technology

Description : This paper presents a study of the ionizing radiation tolerance of 0.13 m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co -rays ...
Language(s) : English
Subject(s) : Electrical & Electronics Engineering , Ingegneria industriale e dell'informazione
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Publication Date(s) : 2006-01-01