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Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments

Description : The impact of foundry-to-foundry variability and bias conditions during irradiation on the Total Ionizing Dose (TID) response of commercial 130-nm CMOS technologies have been investigated for applications in High Energy Physics (HEP) experiments. n- and p-channel MOSFETs from three different manufac...
Language(s) : English
Subject(s) : Electrical & Electronics Engineering , Ingegneria industriale e dell'informazione
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Publication Date(s) : 2007-01-01