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Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics

Author(s) : MANGHISONI, MASSIMO , RATTI, LODOVICO , RE, VALERIO , SPEZIALI, VALERIA , AA.VV.
Description : This paper is devoted to studying the effects of g radiation on the electrical parameters of complementary bipolar junction transistors, part of an SOI (silicon on insulator) BiCMOS process, in view of the design of fast, rad-hard analog blocks. A survey of the total ionizing dose response has been ...
Repository : Aisberg - Archivio Istituzionale Università di Bergamo , View repository documents
Language(s) : English
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Publication Date(s) : 2004-01-01