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• (author = "GAIONI, Luigi")
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Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology

Author(s) : RE, VALERIO , GAIONI, LUIGI , MANGHISONI, MASSIMO , RATTI, LODOVICO , TRAVERSI, GIANLUCA
Description : Irradiation tests on 90 nm CMOS devices at different total ionizing doses lead to new insights into degradation mechanisms in gate oxides and lateral isolation structures and into their impact on gate and drain current noise sources. The action of lateral parasitic transistors and their physical par...
Repository : Aisberg - Archivio Istituzionale Università di Bergamo , View repository documents
Language(s) : English
Subject(s) : Electrical & Electronics Engineering , Ingegneria industriale e dell'informazione
Publisher(s) : IEEE Nuclear and Plasma Sciences Society
Contributor(s) :
Source(s) :
Publication Date(s) : 2008-01-01