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Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation

Description : Experimental data provide insight into the mechanisms governing the impact of gate and lateral isolation dielectrics and of scaling-related technological advances on noise and its sensitivity to total ionizing dose effects in Low Power 65 nm CMOS devices. The behavior of the 1/f noise term is correl...
Language(s) : English
Subject(s) : Electrical & Electronics Engineering , Ingegneria industriale e dell'informazione
Publisher(s) : IEEE
Contributor(s) :
Source(s) :
Publication Date(s) : 2010-01-01