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Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

Description : The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the...
Language(s) : English
Subject(s) : CMOS; microelectronics; noise; sensors; , Electrical & Electronics Engineering , ING-INF/01 - Elettronica
Publisher(s) : Elsevier Science Limited
Contributor(s) :
Source(s) :
Publication Date(s) : 2010-01-01