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Optical investigation of electrical spin injection into semiconductors

Description : We investigate the electrical injection of spin-polarized electrons into a semiconductor [Al(GaAs)] heterostructure from ferromagnetic FeCo metal through an AlOx tunnel barrier. We have developed the optical oblique Hanle effect approach for the quantitative analysis of electrical spin injection int...
Language(s) : English
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Publisher(s) : AMERICAN PHYSICAL SOC
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Publication Date(s) : 2007-12-20