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A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator

Description : A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a III-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 mΩ scaled to 12 GHz. The DC and RF c...
Language(s) : English
Subject(s) : [PHYS:HIST] Physics/Physics archives
Publisher(s) :
Contributor(s) :
Source(s) : Journal de Physique IV
Publication Date(s) : 1994-01-01