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Increased electromechanical coupling in w-ScxAl1-xN

Description : AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (kt2), in w−ScxAl1−xN by studying its dielectric properties. w−ScxAl1−xN (0≤x≤0.3) thin films grown by...
Language(s) : English
Subject(s) : Physics , Fysik
Publisher(s) : Linköping University, Linköping University, Thin Film Physics , Linköping University, Linköping University, Theoretical Physics , Linköping University, Linköping University, Thin Film Physics , Linköping University, Linköping University, Thin Film Physics , Linköping University, Linköping University, Applied Optics , Linköping University, Linköping University, Thin Film Physics
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Publication Date(s) : 2010-01-01